IXTA200N075T
IXTP200N075T
200
Fig. 1. Output Characteristics
@ 25oC
350
Fig. 2. Extended Output Characteristics
@ 25oC
180
160
140
120
V GS = 10V
9V
8V
7V
300
250
200
V GS = 10V
9V
8V
7V
100
80
60
40
20
0
6V
5V
150
100
50
0
6V
5V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
1
2
3
4
5
6
200
V DS - Volts
Fig. 3. Output Characteristics
@ 150oC
2.6
V DS - Volts
Fig. 4. R DS(on) Normalized to I D = 100A Value
vs. Junction Temperature
180
160
140
120
100
80
60
40
20
0
V GS = 10V
9V
8V
7V
6V
5V
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V GS = 10V
I D = 200A
I D = 100A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
175
2.6
V DS - Volts
Fig. 5. R DS(on) Normalized to I D = 100A Value
vs. Drain Current
140
T J - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
2.4
T J = 175oC
120
External Lead Current Limit for TO-263 (7-Lead)
2.2
100
2
1.8
1.6
V GS = 10V
15V - - - -
80
60
External Lead Current Limit for TO-3P, TO-220, & TO-263
1.4
40
1.2
1
0.8
T J = 25oC
20
0
0
50
100
150
200
250
300
350
-50
-25
0
25
50
75
100
125
150
175
I D - Amperes
? 2006 IXYS CORPORATION All rights reserved
T C - Degrees Centigrade
相关PDF资料
IXTA200N085T7 MOSFET N-CH 85V 200A TO-263-7
IXTA220N04T2-7 MOSFET N-CH 40V 220A TO-263-7
IXTA220N04T2 MOSFET N-CH 40V 220A TO-263
IXTA220N055T7 MOSFET N-CH 55V 220A TO-263-7
IXTA220N055T MOSFET N-CH 55V 220A TO-263
IXTA220N075T7 MOSFET N-CH 75V 220A TO-263-7
IXTA230N075T2 MOSFET N-CH 75V 230A TO-263
IXTA240N055T7 MOSFET N-CH 55V 240A TO-263-7
相关代理商/技术参数
IXTA200N075T7 功能描述:MOSFET 200 Amps 75V 4.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA200N085T 功能描述:MOSFET 200 Amps 85V 5.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA-200N085T 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:N-Channel Enhancement Mode Avalanche Rated
IXTA200N085T7 功能描述:MOSFET 200 Amps 85V 5.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA220N04T2 功能描述:MOSFET 220 Amps 40V 0.0035 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA220N04T2-7 功能描述:MOSFET 220 Amps 40V 0.0035 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA220N055T 功能描述:MOSFET 220 Amps 55V 3.6 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA220N055T7 功能描述:MOSFET 220 Amps 55V 3.6 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube